DG408BP45 Datasheet, PDF (18/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG408BP45
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 ± 0.1 x 1.95 ± 0.05 deep
Auxiliary cathode
Gate
20˚
Ø51 nom
Ø38 nom
Cathode
Ø38 nom
Ø56 max
Ø57.5 max
Ø63.5 max
Anode
Nominal weight: 350g
Clamping force: 12kN ±10%
Lead length: 505mm
Package outine type code: P
ASSOCIATED PUBLICATIONS
Title
Calculating the junction temperature or power semiconductors
GTO gate drive units
Recommendations for clamping power semiconductors
Use of V , r on-state characteristic
TO T
Impoved gate drive for GTO series connections
Application Note
Number
AN4506
AN4571
AN4839
AN5001
AN5177
18/19