DG408BP45 Datasheet, PDF (13/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

25
Conditions:
C_S = 1.0µF,
I_T = 1000A
20
DG408BP45
15
T_j = 125˚C
10
T_j = 25˚C
5
10
20
30
40
50
60
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.21 Gate storage time vs rate of rise of reverse gate current
2.0
Conditions:
C_S = 1.0µF,
dI_GQ/dt = 30A/µs
1.5
T_j = 125˚C
1.0
T_j = 25˚C
0.5
0
0
250
500
750
1000
1250
1500
On-state current I_T - (A)
Fig.22 Gate fall time vs on-state current
13/19