DG408BP45 Datasheet, PDF (12/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG408BP45
5000
4000
Conditions:
T_j = 125˚C,
V_DM = V_DRM,
dI_GQ/dt = 30A/µs
3000
2000
C_S = 0.5µF
C_S = 1.5µF
C_S = 1.0µF
C_S = 2.0µF
1000
0
0
250
500
750
1000
1250
On-state current I_T - (A)
Fig.19 Turn-off energy vs on-state current
20.0
Conditions:
C_S = 1.0µF,
dI_GQ/dt = 30A/µs
15.0
10.0
T_j = 125˚C
T_j = 25˚C
1500
5.0
12/19
0
0
250
500
750
1000
1250
1500
On-state current I_T - (A)
Fig.20 Gate storage time vs on-state current