DG408BP45 Datasheet, PDF (14/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG408BP45
2.00
1.75
Conditions:
C_S = 1.0µF,
I_T = 1000A
1.50
T_j = 125˚C
1.25
1.00
10
T_j = 25˚C
20
30
40
50
60
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.23 Gate fall time vs rate of rise of reverse gate current
500
Conditions:
C_S = 1.0µF,
dI_GQ/dt = 30A/µs
400
300
T_j = 125˚C
T_j = 25˚C
200
100
0
250
500
750
1000
1250
Turn-off current I_T - (A)
Fig.24 Peak reverse gate current vs turn-off current
1500
14/19