DG408BP45 Datasheet, PDF (11/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

5000
4000
Conditions:
T_j = 125˚C,
C_S = 1.0µF,
dI_GQ/dt = 30A/µs
3000
2000
DG408BP45
V_DRM
0.75x V_DRM
0.5x V_DRM
1000
0
0
250
500
750
1000
1250
1500
On-state current I_T - (A)
Fig.17 Turn-off energy vs on-state current
4500
4000
Conditions:
T_j = 125˚C,
C_S = 1.0µF,
I_T = 1000A
V_DRM
0.75x V_DRM
3500
3000
0.5x V_DRM
2500
10
20
30
40
50
60
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19