DS1220AB Datasheet, PDF (5/9 Pages) Dallas Semiconductor – 16k Nonvolatile SRAM

AC ELECTRICAL CHARACTERISTICS
DS1220AB-150
PARAMETER
SYMBOL DS1220AD-150
MIN MAX
Read Cycle Time
Access Time
OE to Output Valid
t_RC
150
t_ACC
150
t_OE
70
CE to Output Valid
t_CO
150
OE or CE to Output Active
t_COE
5
Output High Z from
Deselection
t_OD
35
Output Hold from Address
Change
t_OH
5
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from WE
t_WC
t_WP
t_AW
t_WR1
t_WR2
t_ODW
150
100
0
0
10
35
Output Active from WE
t_OEW
5
Data Setup Time
Data Hold Time
t_DS
60
t_DH1
0
t_DH2
10
DS1220AB-200
DS1220AD-200
MIN MAX
200
200
100
200
5
35
5
200
150
0
0
10
35
5
50
0
10
DS1220AB/AD
(cont’d)
UNITS NOTES
ns
ns
ns
ns
ns
5
ns
5
ns
ns
ns
3
ns
ns
12
ns
13
ns
5
ns
4
ns
4
ns
12
ns
13
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