DS1220AB Datasheet, PDF (4/9 Pages) Dallas Semiconductor – 16k Nonvolatile SRAM

DS1220AB/AD
(V_CC =5.0V ± 5% for DS1220AB)
(T_A: See Note 10)
AC ELECTRICAL CHARACTERISTICS
(V_CC =5.0V ± 10% for DS1220AD)
DS1220AB-100 DS1220AB-120
PARAMETER
SYMBOL DS1220AD-100 DS1220AD-120 UNITS NOTES
MIN MAX MIN MAX
Read Cycle Time
Access Time
OE to Output Valid
t_RC
100
120
ns
t_ACC
100
120
ns
t_OE
50
60
ns
CE to Output Valid
t_CO
100
120
ns
OE or CE to Output Active
t_COE
5
5
ns
5
Output High Z from
Deselection
t_OD
35
35
ns
5
Output Hold from Address
Change
t_OH
5
5
ns
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High from WE
t_WC
100
120
ns
t_WP
75
90
ns
3
t_AW
0
0
ns
t_WR1
0
0
ns
12
t_WR2
10
10
ns
13
t_ODW
35
35
ns
5
Output Active from WE
t_OEW
5
5
ns
4
Data Setup Time
Data Hold Time
t_DS
40
50
t_DH1
0
0
t_DH2
10
10
ns
4
ns
12
ns
13
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