DS1220AB Datasheet, PDF (3/9 Pages) Dallas Semiconductor – 16k Nonvolatile SRAM

ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
DS1220AB/AD
-0.3V to +7.0V
0°C to 70°C; -40°C to +85°C for IND parts
-40°C to +70°C; -40°C to +85°C for IND parts
260°C for 10 seconds
∗ This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(T_A: See Note 10)
PARAMETER
SYMBOL MIN TYP MAX UNITS NOTES
DS 1220AB Power Supply Voltage
DS 1220AD Power Supply Voltage
Logic 1
Logic 0
V_CC
4.75 5.0 5.25
V
V_CC
4.50 5.0 5.50
V
V_IH
2.2
V_CC
V
V_IL
0.0
+0.8 V
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Input Leakage Current
I/O Leakage Current
CE ≥ V_IH ≤ V_CC
Output Current @ 2.4V
Output Current @ 0.4V
Standby Current CE = 2.2V
Standby Current CE = V_CC-0.5V
Operating Current t_CYC=200 ns
(Commercial)
Operating Current t_CYC=200ns
(Industrial)
Write Protection Voltage
(DS1220AB)
Write Protection Voltage
(DS1220AD)
I_IL
I_IO
I_OH
I_OL
I_CCS1
I_CCS2
I_CC01
I_CCO1
V_TP
V_TP
(V_CC =5V ± 5% for DS1220AB)
(T_A: See Note 10)
(V_CC =5V ± 10% for DS1220AD)
MIN TYP MAX UNITS NOTES
-1.0
+1.0 µA
-1.0
+1.0 µA
-1.0
mA
2.0
mA
5.0 10.0 mA
3.0 5.0 mA
75 mA
85 mA
4.5 _{4.62 4.75}
V
4.25 _{4.37 4.5}
V
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C_IN
C_I/O
MIN
TYP
5
5
MAX
10
12
(T_A =25°C)
UNITS NOTES
pF
pF
3 of 9