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DS1258Y Datasheet, PDF (4/8 Pages) Dallas Semiconductor – 128k x 16 Nonvolatile SRAM
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CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN
TYP
20
5
MAX
25
10
DS1258Y/AB
(tA = +25°C)
UNITS NOTES
pF
pF
AC ELECTRICAL
CHARACTERISTICS
(VCC = 5V ± 5% for DS1258AB)
(tA: See Note 10) (VCC = 5V ± 10% for DS1258Y)
DS1258AB-70 DS1258AB-100
DS1258Y-70 DS1258Y-100
PARAMETER
SYMBOL MIN MAX MIN MAX UNITS NOTES
Read Cycle Time
tRC
70
100
ns
Access Time
tACC
70
100
ns
OE to Output Valid
tOE
35
50
ns
CEU or CEL to Output Valid
tCO
70
100
ns
OE or CEU or CEL to Output Valid
tCOE
5
5
ns
5
Output High Z from Deselection
tOD
25
35
ns
5
Output Hold from Address Change
tOH
5
5
ns
Write Cycle Time
tWC
70
100
ns
Write Pulse Width
tWP
55
75
ns
3
Address Setup Time
tAW
0
0
ns
Write Recovery Time
tWR1
5
5
tWR2
15
15
ns
12
ns
13
Output High Z from WE
tODW
25
35
ns
5
Output Active from WE
tOEW
5
5
ns
5
Data Setup Time
tDS
30
40
ns
4
Data Hold Time
tDH1
0
0
tDH2
10
10
ns
12
ns
13
READ CYCLE
SEE NOTE 1
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