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DS1258Y Datasheet, PDF (3/8 Pages) Dallas Semiconductor – 128k x 16 Nonvolatile SRAM
DS1258Y/AB
retain data. During power-up, when VCC rises above approximately 3.0V, the power switching circuit
connects external VCC to RAM and disconnects the lithium energy source. Normal RAM operation can
resume after VCC exceeds 4.75V for the DS1258AB and 4.5V for the DS1258Y.
FRESHNESS SEAL
The DS1258 devices are shipped from Dallas Semiconductor with the lithium energy sources
disconnected, guaranteeing full energy capacity. When VCC is first applied at a level greater than VTP, the
lithium energy source is enabled for battery backup operation.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
-0.3V to +6.0V
0°C to +70°C, -40°C to +85°C for Industrial Parts
-40°C to +70°C, -40°C to +85°C for Industrial Parts
See IPC/JEDEC J-STD-020A Specification
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL MIN TYP
DS1258AB Power Supply Voltage
VCC
4.75 5.0
DS1258Y Power Supply Voltage
VCC
4.5 5.0
Logic 1
VIH
2.2
Logic 0
VIL
0.0
(tA: See Note 10)
MAX UNITS NOTES
5.25
V
5.5
V
VCC
V
+0.8
V
DC ELECTRICAL
CHARACTERISTICS
PARAMETER
(VCC = 5V ± 5% for DS1258AB)
(tA: See Note 10) (VCC = 5V ± 10% for DS1258Y)
SYMBOL MIN TYP MAX UNITS NOTES
Input Leakage Current
IIL
-2.0
+2.0
mA
I/O Leakage Current CEU = CEL ³ VIH
£ VCC
IIO
-1.0
+1.0
mA
Output Current @ 2.4V
IOH
-1.0
mA
Output Current @ 0.4V
IOL
2.0
mA
Standby Current CEU , CEL =2.2V
ICCS1
0.7
1.5
mA
Standby Current CEU , CEL =VCC - 0.5V
ICCS2
150 300
mA
Operating Current
ICCO1
170
mA
Write Protection Voltage (DS1258AB)
VTP
4.50 4.62 4.75
V
Write Protection Voltage (DS1258Y)
VTP
4.25 4.37 4.5
V
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