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| DS1495 Datasheet, PDF (16/19 Pages) Dallas Semiconductor – RAMified Real Time Clock | |||
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DS1495/DS1497
GENERAL INFORMATION
PARAMETER
SYM
MIN
Expected Data Retention @ 25°C
(DS1497 only)
tDR
10
Clock Accuracy for tDR @ 25°C
(DS1497 only)
CQ
±1
Clock Accuracy Temperature Coefficient
K
(DS1497)
Clock Temperature Coefficient
tO
20
Turnover Temperature (DS1497 only)
Chip Enable Threshold (DS1497 only)
CETHR
POWERâUP CONDITION
CE
VIH
tREC
4.5V
4.25V
4.0V
VCC
tR
TYP
MAX
UNIT
Years
NOTES
Min/Mo
.050 ppm/°C2
30
0°C
4.5
V
POWER FAIL
NOTE:
CE is an internal signal generated by the power switching reference in the DS149X products.
POWERâDOWN CONDITION
CE
VIH
tPF
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ
VCC
POWER FAIL
tF
4.5V
4.25V
4.0V
VBAT
tDR
tFB
020894 16/19
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