MTB60P15H8 Datasheet, PDF (6/10 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C960H8
Issued Date : 2014.10.30
Revised Date : 2014.11.14
Page No. : 6/10
Typical Characteristics(Cont.)
Typical Transfer Characteristics
50
VDS=-10V
40
30
20
10
0
0
1
2
3
4
5
-VGS, Gate-Source Voltage(V)
Maximum Drain Current vs Case Temperature
25
20
15
10
Single Pulse Maximum Power Dissipation
350
300
TJ(MAX)=150°C
250
TA=25°C
θ JA=65°C/W
200
150
100
50
0
0.0001 0.001 0.01 0.1 1 10
Pulse Width(s)
100 1000
Maximum Safe Operating Area
100
RDSON
10 Limited
1
0.1
100μ s
1ms
10ms
100ms
DC
5
VGS=-10V, RθJC=1.5°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
Single Pulse Maximum Power Dissipation
1000
900
800
TJ(MAX)=175°C
700
TC=25°C
θ JC=1.5°C/W
600
500
400
300
200
100
0
0.0001 0.001 0.01
0.1
1
10
Pulse Width(s)
0.01 TC=25°C, VGS=-10V,Tj=175°C
RθJC=1.5°C/W, Single Pulse
0.001
0.01
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
1000
Power Derating Curve
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC, Case Temperature(℃)
MTB60P15H8
CYStek Product Specification