MTB60P15H8 Datasheet, PDF (4/10 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C960H8
Issued Date : 2014.10.30
Revised Date : 2014.11.14
Page No. : 4/10
Typical Characteristics
Typical Output Characteristics
50
10V,9V,8V,7V,6V,5V,4V,3V
40
Brekdown Voltage vs Ambient Temperature
1.4
1.2
30
-VGS=2.5V
20
10
-VGS=2V
0
0
4
8
12
16
20
-VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=-2V
VGS=-2.5V
VGS=-3V
VGS=-4.5V
VGS=-10V
100
1
0.8
0.6
ID=-250μ A,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
10
0.01
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
450
400
ID=-5.2A
350
300
250
200
150
100
50
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.8
2.4
VGS=-10V, ID=-5.2A
2
1.6
1.2
0.8
0.4
RDS(ON)@ Tj=25°C : 56mΩ (typ.)
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTB60P15H8
CYStek Product Specification