MTB60P15H8 Datasheet, PDF (5/10 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C960H8
Issued Date : 2014.10.30
Revised Date : 2014.11.14
Page No. : 5/10
Typical Characteristics(Cont.)
10000.0
Capacitance vs Drain-to-Source Voltage
Ciss
1000.0
C _oss
100.0
Crss
10.0
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=-1mA
1
0.8
0.6
0.4
ID=-250μ A
0.2
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
100
RDSON
10 Limited
1
0.1
0.01 TA=25°C, VGS=-10V,Tj=150°C
RθJA=65°C/W, Single Pulse
100μ s
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Junction Temperature
5
Gate Charge Characteristics
10
VDS=-75V
8
ID=-5.2A
6
4
2
0
0 20 40 60 80 100 120 140
Qg, Total Gate Charge(nC)
Forward Transfer Admittance vs Drain Current
100
4
3
2
1 TA=25°C, VGS=-10V,
RθJA=65°C/W
0
25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
10
1
VDS=-10V
0.1
Pulsed
Ta=25°C
0.01
0.001 0.01
0.1
1
10
100
-ID, Drain Current(A)
MTB60P15H8
CYStek Product Specification