MTB60P15H8 Datasheet, PDF (3/10 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C960H8
Issued Date : 2014.10.30
Revised Date : 2014.11.14
Page No. : 3/10
Dynamic *4
Ciss
-
5573
-
Coss
-
245
-
pF
Crss
-
83
-
Qg *1, 2
-
121
-
Qgs *1, 2
-
12.2
-
nC
Qgd *1, 2
-
20.8
-
td(ON) *1, 2
-
20
-
tr *1, 2
-
35
-
ns
td(OFF) *1, 2
-
200
-
tf *1, 2
-
82
-
Rg
-
3.8
-
Ω
Source-Drain Diode
IS *1
-
-
-5.9
A
ISM *3
-
-
-20
VSD *1
-
-0.73
-1
V
trr
-
38
-
ns
Qrr
-
68
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
*4.Guaranteed by design, not subject to production testing.
VDS=-30V,VGS=0V, f=1MHz
VDS=-75V, VGS=-10V, ID=-5.2A
VDS=-75V, ID=-4.8A, VGS=-10V, RG=6Ω
f=1MHz
IS=-4.2A, VGS=0V
IF=-2.9A, dIF/dt=100A/μs
Recommended Soldering Footprint
MTB60P15H8
unit : mm
CYStek Product Specification