MTB370N10KL3 Datasheet, PDF (6/9 Pages) Cystech Electonics Corp. – N-channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C886L3
Issued Date : 2016.01.25
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
7
6
VDS=10V
5
4
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
50
40
TJ(MAX)=150°C
TA=25°C
RθJA=45°C/W
30
3
20
2
10
1
0
0
1
2
3
4
5
6
VGS, Gate-Source Voltage(V)
0
0.0001 0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.E-05
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=45°C/W
Single Pulse
1.E-04
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
MTB370N10KL3
CYStek Product Specification