MTB370N10KL3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – N-channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C886L3
Issued Date : 2016.01.25
Revised Date :
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
5
10V
9V
4 _8V
7V
3
6V
5V
4.5V
2
4V
4.5V
3.5V
Brekdown Voltage vs Junction Temperature
1.4
1.2
1
0.8
1
VGS=3V
0
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=4V
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
VGS=4.5V
VGS=10V
0.8
Tj=150°C
0.6
0.4
100
0.01
0.1
1
10
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
800
ID=1A
600
400
200
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0123 45678
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2
VGS=10V, ID=1A
RDS(ON)@Tj=25°C : 378mΩ typ.
1.6
1.2
0.8
VGS=4.5V, ID=1A
0.4
RDS(ON)@Tj=25°C : 407mΩtyp.
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB370N10KL3
CYStek Product Specification