MTB370N10KL3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C886L3
Issued Date : 2016.01.25
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
1.2
Ciss
100
1
ID=1mA
C _oss
0.8
10
Crss
0.6
ID=250μA
1
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
VDS=10V
1
VDS=15V
0.1
0.01
0.001
Ta=25°C
Pulsed
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
10
RDSON
Limited
10μs
1
100μs
1ms
0.1
TA=25°C, Tj=150°C
VGS=10V, RθJA=45°C/W
Single Pulse
10ms
100ms
DC
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=50V
8
VDS=20V
6
VDS=80V
4
2
ID=7.3A
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
TA=25°C, VGS=10V, RθJA=45°C/W
0.2
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB370N10KL3
CYStek Product Specification