MTB370N10KL3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C886L3
Issued Date : 2016.01.25
Revised Date :
Page No. : 1/9
100V N-channel Enhancement Mode MOSFET
MTB370N10KL3 BVDSS
ID@VGS=10V, TA=25°C
RDSON@VGS=10V, ID=1A
RDSON@VGS=4.5V, ID=1A
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• ESD protected gate
• Pb-free lead plating package
RDSON@VGS=4V, ID=1A
100V
1.7A
378mΩ (typ)
407mΩ (typ)
415mΩ (typ)
Symbol
MTB370N10KL3
G：Gate
S：Source
D：Drain
Outline
SOT-223
D
S
D
G
Ordering Information
Device
MTB370N10KL3-0-T3-G
Package
Shipping
SOT-223
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 :2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB370N10KL3
CYStek Product Specification