MTB370N10KL3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N-channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
*1
Single Pulse Avalanche Current @ L=1mH
Single Pulse Avalanche Energy @ L=10mH, IAS=3A, VGS=10V *3
Total Power Dissipation
TA=25℃
*2
TA=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by safe operating area
*2. Surface mounted on a 1 in² pad of 2 oz. copper, t≤10s.
*3. 100% tested by conditions of L=1mH, IAS=1.7A, VGS=10V, VDD=25V
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
Spec. No. : C886L3
Issued Date : 2016.01.25
Revised Date :
Page No. : 2/9
Limits
Unit
100
V
±20
1.7
1.36
A
6.8
6
45
mJ
2.7
W
1.1
-55~+150 °C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
RθJC
Thermal Resistance, Junction-to-ambient, max
RθJA
8
45 (Note)
°C/W
Note : Surface mounted on a 1 in² pad of 2 oz. copper, t≤10s; 120°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
Min.
100
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
Test Conditions
-
-
V VGS=0V, ID=250μA
0.08
-
V/°C Reference to 25°C, ID=250μA
-
2.5
V VDS=VGS, ID=250μA
-
±10
VGS=±20V, VDS=0V
-
1
μA _{VDS=100V, VGS=0V}
-
25
VDS=80V, VGS=0V (Tj=70°C)
378
490
VGS=10V, ID=1A
407
530
mΩ VGS=4.5V, ID=1A
415
580
VGS=4V, ID=1A
2.1
-
S VDS=10V, ID=1A
102
-
25
-
13
-
3.6
-
16.6
-
11
-
26.8
-
pF VDS=25V, VGS=0V, f=1MHz
ns VDS=50V, ID=7.3A, VGS=10V, RG=25Ω
MTB370N10KL3
CYStek Product Specification