MTB300P10QL3 Datasheet, PDF (6/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C051L3
Issued Date : 2017.01.26
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
10
VDS=-10V
1
VDS=-15V
Single Pulse Power Rating, Junction to Case
300
250
TJ(MAX)=150°C
TA=25°C
200
RθJA=50°C/W
150
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01
0.1
1
10
-ID, Drain Current(A)
100
50
0
0.00001 0.0001 0.001 0.01 0.1
1
10
Pulse Width(s)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.E-05
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50°C/W
Single Pulse
1.E-04
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
MTB300P10QL3
CYStek Product Specification