MTB300P10QL3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C051L3
Issued Date : 2017.01.26
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=-1mA
1.0
100
C _oss
f=1MHz
10
0
Crss
10
20
-VDS, Drain-Source Voltage(V)
0.8
0.6
ID=-250μA
0.4
0.2
30
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
100
Gate Charge Characteristics
10
10
RDS(ON)
Limited
1
10μs
100μs
0.1 _{TA=25°C, Tj=150°C,}
VGS=-10V, RθJA=50°C/W,
single pulse
0.01
1ms
10ms
100ms
DC
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
1000
8
VDS=-50V
VDS=-20V
6
4
VDS=-80V
2
ID=-1.7A
0
0
2
4
6
8
10
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4 VGS=-10V, Tj(max)=150°C,
0.2 ^{RθJA=50°C/W, single pulse}
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Typical Transfer Characteristics
10
VDS=-10V
8
6
4
2
0
0 1 2 3 4 5 6 7 8 9 10
-VGS, Gate-Source Voltage(V)
MTB300P10QL3
CYStek Product Specification