MTB300P10QL3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=-10V, TA=25°C
Continuous Drain Current @ VGS=-10V, TA=70°C
Pulsed Drain Current *1
Single Pulse Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=-8A, VGS=-10V, VDD=-50V
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TA=25℃
Total Power Dissipation @TA=70℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Spec. No. : C051L3
Issued Date : 2017.01.26
Revised Date :
Page No. : 2/9
Limits
Unit
-100
±20
V
-1.7
-1.4
A
-12
-17
32
mJ
0.5
2.5
W
1.6
-55~+150
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
RθJC
RθJA
6
50 (Note)
°C/W
Note : Surface mounted on a 1 in² pad of 2 oz. copper, t≤10s; 120°C/W when mounted on minimum copper pad.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
-100
-
-
V
VGS=0V, ID=-250μA
-1
-
-2.5
VDS =VGS, ID=-250μA
-
-
±100
nA V_GS=±20V, V_DS=0V
IDSS
-
-
-
-
-1
-25
μA
VDS =-80V, VGS =0V
VDS =-80V, VGS =0V, TJ=125°C
RDS(ON) *1
-
-
342
430
mΩ ^{VGS =-10V, ID=-1.7A}
446
620
VGS =-4.5V, ID=-1A
GFS *1
-
2.6
-
S VDS =-15V, ID=-1A
Dynamic
Qg *1, 2
-
8.6
-
Qgs *1, 2
-
1.1
-
nC ID=-1.7A, VDS=-80V, VGS=-10V
Qgd *1, 2
-
3.2
-
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
-
5.8
-
-
18
-
-
20.2
-
ns
VDS=-50V, ID=-1.7A, VGS=-10V,
RG=6Ω
tf *1, 2
-
17.4
-
MTB300P10QL3
CYStek Product Specification