MTB300P10QL3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C051L3
Issued Date : 2017.01.26
Revised Date :
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
10
10V
9V
8
8V
7V
4V
6
6V
5V
4
-VGS=3.5V
2
-VGS=3V
0
0 1 2 3 4 5 6 7 8 9 10
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
1000
800
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1.0
0.8
0.6
ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1.0
Tj=25°C
600
VGS= -4.5V
400
200
VGS=-10V
0.8
Tj=150°C
0.6
0.4
0
0.01
0.1
1
10
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
ID=-1.7A
800
600
400
200
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2.2
VGS=-10V, ID=-1.7A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
RDS(ON)@Tj=25°C : 342mΩ typ.
0.2
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB300P10QL3
CYStek Product Specification