MTB300P10QL3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C051L3
Issued Date : 2017.01.26
Revised Date :
Page No. : 3/9
Ciss
-
240
-
Coss
-
33
-
pF
Crss
-
22
-
Rg
-
4.2
-
Ω
Source-Drain Diode
IS *1
ISM *3
-
-
-1.7
A
-
-
-12
VSD *1
-
-0.83
-1.2
V
trr
-
19.2
-
ns
Qrr
-
12
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
VGS=0V, VDS=-50V, f=1MHz
f=1MHz
IS=-1A, VGS=0V
IF=-1A, dIF/dt=100A/μs
Recommended soldering footprint
MTB300P10QL3
CYStek Product Specification