MTB080P06M3 Datasheet, PDF (6/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C069M3
Issued Date : 2016.04.19
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
18
16
VDS=-10V
14
12
10
8
6
4
2
0
0
2
4
6
8
-VGS, Gate-Source Voltage(V)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
300
TJ(MAX)=150°C
250
TA=25°C
RθJA=62.5°C/W
200
150
100
50
0
0.0001 0.001
0.01 0.1
1
Pulse Width(s)
10 100
Transient Thermal Response Curves
10
1
D=0.5
0.2
0.1 ^0.1
0.05
0.02
0.01 ^0.01
0.001
0.0001
0.001
Single Pulse
0.01
0.1
1
t1, Square Wave Pulse Duration(s)
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=62.5°C/W
10
100
1000
Reel Dimension
MTB080P06M3
CYStek Product Specification