MTB080P06M3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C069M3
Issued Date : 2016.04.19
Revised Date :
Page No. : 1/9
-60V P-Channel Enhancement Mode MOSFET
MTB080P06M3
BVDSS
ID@VGS=-10V, TA=25°C
RDSON@VGS=-10V, ID=-3A
RDSON@VGS=-4.5V, ID=-3A
-60V
-3.2A
83mΩ(typ.)
112mΩ(typ.)
Features
• Single Drive Requirement
• Ultra High Speed Switching
• Pb-free lead plating and halogen-free package
Symbol
MTB080P06M3
Outline
SOT-89
G：Gate
S：Source
D：Drain
G ^DD S
Ordering Information
Device
MTB080P06M3-0-T2-G
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
1000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T2 : 1000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB080P06M3
CYStek Product Specification