MTB080P06M3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C069M3
Issued Date : 2016.04.19
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100
C _oss
10
0
Crss
5
10
15
20
25
30
-VDS, Drain-Source Voltage(V)
Normalized Threshold Voltage vs Junction
Tempearture
1.6
1.4
1.2
ID=-1mA
1
0.8
0.6
ID=-250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
100
VDS=-10V
Pulsed
TA=25°C
0.01
0.1
1
10
-ID, Drain Current(A)
Maximum Safe Operating Area
10
100μs
1ms
1
10ms
0.1
TA=25°C, Tj=150°C, VGS=-10V
RθJA=62.5°C/W, Single Pulse
100ms
1s
DC
0.01
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
1000
8
VDS=-30V
6
VDS=-15V
4
VDS=-48V
2
ID=-3A
0
0
2
4
6
8
10
12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
TA=25°C, VGS=-10V, RθJA=62.5°C/W
0.0
25
50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB080P06M3
CYStek Product Specification