MTB080P06M3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C069M3
Issued Date : 2016.04.19
Revised Date :
Page No. : 3/9
*Qg
-
*Qgs
-
*Qgd
-
Source-Drain Diode
*VSD
-
*trr
-
*Qrr
-
11
-
1.7
-
2.4
-
-0.81 -1.2
10.6
-
6.4
-
nC VDS=-30V, ID=-3A, VGS=-10V
V VGS=0V, IS=-2A
ns
nC
IF=-2A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTB080P06M3
CYStek Product Specification