MTB080P06M3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C069M3
Issued Date : 2016.04.19
Revised Date :
Page No. : 4/9
Typical Characteristics
18
16
14
12
10
8
6
4
2
0
0
Typical Output Characteristics
-10V, -9V,-8V,-7V,-6V,-5.5V,-5V
-4.5V
-4V
-3.5V
VGS=-3V
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
Normalized Brekdown Voltage vs Ambient
Temperature
1.4
1.2
1
0.8
ID=-250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
Source Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
VGS=-4.5V
0.8
100
0.6
VGS=-10V
Tj=150°C
0.4
10
0.1
1
10
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
450
400
ID=-3A
350
300
250
200
150
100
50
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
-IS, Source Drain Current(A)
Normalized Drain-Source On-State Resistance vs
Junction Tempearture
2.2
2
VGS=-10V, ID=-3A
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
RDS(ON)@Tj=25°C : 83mΩ typ.
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB080P06M3
CYStek Product Specification