MTB02N03H8 Datasheet, PDF (6/11 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C575H8
Issued Date : 2012.05.09
Revised Date :2012.11.12
Page No. : 6/11
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
Crss
1000
1
C _oss
0.8
0.6
100
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=10V
0.1
Pulsed
Ta=25°C
0.01
0.001 0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Safe Operating Area
1000
100 ^{RDS(ON) Limit}
10
1
100μs
1ms
10ms
100ms
1s
DC
0.1
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
0.4
-60
10
8
6
4
-20
20
60
100 140
Tj, Junction Temperature(°C)
Gate Charge Characteristics
VDS=15V
VDS=10V
VDS=5V
2
ID=30A
0
0
20
40
60
80
100
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
90
80
70
60
50
40
30
20
10
0
25
50
75 100 125 150 175
TC, Case Temperature(°C)
MTB02N03H8
CYStek Product Specification