MTB02N03H8 Datasheet, PDF (3/11 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C575H8
Issued Date : 2012.05.09
Revised Date :2012.11.12
Page No. : 3/11
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Qg (VGS=10V) *1, 2
-
80
-
Qg (VGS=4.5V) *1, 2
-
Qgs *1, 2
-
27
19
-
-
nC _{VDS=15V, VGS=10V, ID=30A}
Qgd *1, 2
-
38
-
td(ON) *1, 2
-
20
-
tr *1, 2
td(OFF) *1, 2
-
36
-
ns ^{VDS=15V, ID=24A, VGS=10V,}
-
80
-
RGS=2.7Ω
tf *1, 2
-
33
-
Rg
-
1.2
-
Ω VGS=15mV, VDS=0V, f=1MHz
Source-Drain Diode
IS *1
ISM *3
-
-
75
-
-
150
A
VSD *1
-
-
1.3
V
trr
-
35
-
ns
Qrr
-
15
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
IF=30A, VGS=0V
IF=IS, dIF/dt=100A/μs
Ordering Information
Device
MTB02N03H8
Package
DFN5×6
(Pb-free lead plating)
Shipping
3000 pcs / Tape & Reel
MTB02N03H8
CYStek Product Specification