MTB02N03H8 Datasheet, PDF (5/11 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C575H8
Issued Date : 2012.05.09
Revised Date :2012.11.12
Page No. : 5/11
Typical Characteristics
Typical Output Characteristics
240
10V, 9V, 8V, 7V, 6V
200
Brekdown Voltage vs Ambient Temperature
1.4
1.2
160
VGS=5V
120
VGS=4V
80
VGS=2V
VGS=3V
40
0
0
2
4
6
8
10
VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-100 -50
0
50 100 150 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
100
VGS=2.5V
1
Tj=25°C
0.8
VGS=3V
10
VGS=4.5V
1
0.1
VGS=10V
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80
ID=30A
70
60
50
40
30
20
10
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.6
Tj=150°C
0.4
0.2
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2
VGS=10V, ID=30A
1.6
1.2
0.8
0.4
RDS(ON)@Tj=25°C : 2.5mΩ
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
MTB02N03H8
CYStek Product Specification