MTA5D0P01H8 Datasheet, PDF (6/10 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C044H8
Issued Date : 2017.07.25
Revised Date :
Page No. : 6/ 10
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
100
Single Pulse Maximum Power Dissipation
1500
10
1200
TJ(MAX)=150°C
TC=25°C
900
RθJC=2.5°C/W
1
600
VDS=-5V
0.1
Pulsed
Ta=25°C
300
0.01
0.001 0.01
0.1
1
10
100
-ID, Drain Current(A)
Power Derating Curve
60
0
0.0001 0.001 0.01
0.1
1
10
Pulse Width(s)
50
40
30
20
10
0
0 25
1
D=0.5
50 75 100 125 150 175
TC, Case Temperature(℃)
Transient Thermal Response Curves
0.2
0.1
0.1 _0.05
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.5°C/W
0.02
0.01
1.E-04
MTA5D0P01H8
Single Pulse
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
CYStek Product Specification