MTA5D0P01H8 Datasheet, PDF (4/10 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C044H8
Issued Date : 2017.07.25
Revised Date :
Page No. : 4/ 10
Typical Characteristics
Typical Output Characteristics
200
Brekdown Voltage vs Ambient Temperature
1.4
160
10V,9V,8V,7V,6V,5V,4V,3.5V
1.2
120
-VGS=3V
1
80
-VGS=2V
0.8
40
0
0
-VGS=1.5V
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
50
40
In descending order
30
VGS=-2.5V
-4.5V
-10V
20
10
0.6
ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
0.8
Tj=25°C
0.6
Tj=150°C
0.4
0
0.01
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
50
ID=-20A
40
0.2
0
5
10
15
20
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.5
VGS=-4.5V, ID=-20A
2
30
1.5
20
1
10
0
0
2
4
6
-VGS, Gate-Source Voltage(V)
0.5
RDS(ON)@Tj=25°C : 4mΩ typ
0
8
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTA5D0P01H8
CYStek Product Specification