MTA5D0P01H8 Datasheet, PDF (5/10 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C044H8
Issued Date : 2017.07.25
Revised Date :
Page No. : 5/ 10
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
C _oss
1000
Crss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=-1mA
1
0.8
0.6
f=1MHz
0.4
ID=-250μA
100
0
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1000
100
Maximum Safe Operating Area
RDS(ON)
Limited
100μs
Gate Charge Characteristics
8
6
VDS=-10V
1ms
10
10ms
DC
1 ^{TC=25°C, Tj=150°C,}
VGS=-4.5V, RθJC=2.5°C/W,
single pulse
100ms
0.1
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
Maximum Drain Current vs Case Temperature
90
80
Silicon Limit
70
60
50
40 Package Limit
30
20
VGS=-4.5V, Tj(max)=150°C,
10
RθJC=2.5°C/W, single pulse
0
25
50
75
100 125 150 175
TC, Case Temperature(°C)
4
VDS=-15V
2
ID=-20A
0
0 20 40 60 80 100 120 140
Qg, Total Gate Charge(nC)
Typical Transfer Characteristics
200
180
VDS=-10V
160
140
120
100
80
60
40
20
0
0
1
2
3
4
5
-VGS, Gate-Source Voltage(V)
MTA5D0P01H8
CYStek Product Specification