MTA5D0P01H8 Datasheet, PDF (3/10 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C044H8
Issued Date : 2017.07.25
Revised Date :
Page No. : 3/ 10
-
RDS(ON) *1
-
4.0
5.6
mΩ
5.4
9.3
mΩ
Dynamic *4
Ciss
-
6078
-
Coss
-
1246
-
pF
Crss
-
724
-
Qg *1, 2
-
62.1
93.1
Qgs *1, 2
-
9.6
-
nC
Qgd *1, 2
-
20.5
-
td(ON) *1, 2
-
25.2
37.8
tr *1, 2
-
td(OFF) *1, 2
-
85.2
127.8
ns
100.2 150.3
tf *1, 2
-
Rg
-
311
466.5
12
-
Ω
Source-Drain Diode
VSD *1
-
-0.82
-1.2
V
trr
-
142
-
ns
Qrr
-
123
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
*4.Guaranteed by design, not subject to production testing.
VGS =-4.5V, ID=-20A
VGS =-2.5V, ID=-15A
VDS=-10V, VGS=0V, f=1MHz
VDS=-10V, VGS=-4.5V, ID=-20A
VDS=-10V, ID=-20A, VGS=-4.5V,
RG=1Ω
f=1MHz
IS=-20A, VGS=0V
IF=-20A, dIF/dt=100A/μs
Recommended Soldering Footprint
MTA5D0P01H8
unit : mm
CYStek Product Specification