MTB150N10J3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C868J3
Issued Date : 2016.06.06
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
Ciss
100
C _oss
Crss
10
0
10
20
30
40
50
60
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
VDS=10V
1
VDS=15V
1.2
1
ID=1mA
0.8
0.6
ID=250μA
0.4
-65 -35 -5 25 55 85 115 145 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=50V
8
6
VDS=20V
0.1
Ta=25°C
Pulsed
0.01
0.001
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
100
RDSON
10 ^Limited
1
100μs
1ms
10ms
100ms
1s
DC
0.1 _{TC=25°C, Tj=150°C}
VGS=10V, RθJC=5°C/W
Single Pulse
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
4
VDS=80V
2
ID=10A
0
0
2
4
6
8
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
9
8
7
6
5
4
3
2
1
VGS=10V, RθJC=5°C/W
0
25
50
75 100 125 150 175
TC, Case Temperature(°C)
MTB150N10J3
CYStek Product Specification