MTB150N10J3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C868J3
Issued Date : 2016.06.06
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Qg *1, 2
-
2.7
-
Qgs *1, 2
-
2.2
-
nC VDS=50V, VGS=4.5V, ID=5A
Qgd *1, 2
-
0.1
-
td(ON) *1, 2
-
4.6
-
tr *1, 2
td(OFF) *1, 2
-
-
16.6
18.2
-
-
ns VDS=50V, ID=1A, VGS=10V, RGS=6Ω
tf *1, 2
Rg
-
16.8
-
-
3.1
-
Ω f=1MHz
Source-Drain Diode
IS *1
ISM *3
-
-
7
-
-
28
A
VSD *1
-
0.91
1.2
V
trr
-
35
-
ns
Qrr
-
35
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
IS=10A, VGS=0V
IF=10A, dIF/dt=100A/μs
Recommended soldering footprint
MTB150N10J3
CYStek Product Specification