MTB150N10J3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C868J3
Issued Date : 2016.06.06
Revised Date :
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
20
10V,9V,8V,7V,6V,5V
16
4V
12
8
4
0
0
3.5V
3V
VGS=2.5
5
10
15
20
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
1000
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
VGS=4.5V
100
0.01
VGS=10V
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
900
ID=10A
800
700
600
500
400
300
200
100
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.6
Tj=150°C
0.4
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
3
2.5
VGS=10V, ID=10A
2
1.5
1
0.5
RDS(ON)@Tj=25°C : 163mΩ typ.
0
-65 -35
-5 25 55 85 115 145 175
Tj, Junction Temperature(°C)
MTB150N10J3
CYStek Product Specification