MTB150N10J3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Energy @ L=1mH, ID=7A, VDD=50V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
Operating Junction and Storage Temperature Range
TC=25℃
TC=100℃
TA=25℃
TA=70℃
Symbol
VDS
VGS
ID
IDM
EAS
EAR
PD
PDSM
Tj, Tstg
Spec. No. : C868J3
Issued Date : 2016.06.06
Revised Date :
Page No. : 2/9
Limits
Unit
100
±20
V
7
4.4
2.3
A
1.8
28 *1
24.5 *3
mJ
2.5
25
16
W
2.5 *2
1.6 *2
-55~+150
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
RθJC
RθJA
5
50 *2
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper. In practice Rth,j-a will be determined by customer’s PCB characteristics.
125°C/W when mounted on a minimum pad of 2 oz. copper.
3. 100% tested by conditions of L=0.1mH, IAS=5A, VGS=10V, VDD=50V, rated 100V
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
100
-
-
V
VGS=0V, ID=250μA
VGS(th)
1
-
2.5
VDS = VGS, ID=250μA
GFS *1
-
IGSS
-
7.8
-
S
VDS =10V, ID=7A
-
±100
nA V_GS=±20V
IDSS
-
-
-
-
1
10
μA
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=85°C
RDS(ON) *1
-
-
163
210
mΩ ^{VGS =10V, ID=10A}
178
235
VGS =4.5V, ID=10A
Dynamic
Ciss
-
258
-
Coss
-
38
-
pF
VDS=25V, VGS=0V, f=1MHz
Crss
-
25
-
Qg *1, 2
-
6.3
-
Qgs *1, 2
-
1.1
-
nC
VDS=80V, VGS=10V, ID=10A
Qgd *1, 2
-
3.0
-
MTB150N10J3
CYStek Product Specification