MTB150N10J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C868J3
Issued Date : 2016.06.06
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB150N10J3
BVDSS
ID @ VGS=10V, TA=25°C
ID @ VGS=10V, TC=25°C
VGS=10V, ID=10A
RDSON(TYP)
VGS=4.5V, ID=10A
100V
2.3A
7A
163 mΩ
178 mΩ
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB150N10J3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
MTB150N10J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB150N10J3
CYStek Product Specification