MTB12P06E3 Datasheet, PDF (5/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C584E3
Issued Date : 2015.06.18
Revised Date : 2016.05.16
Page No. : 5/8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C _oss
100
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=-1mA
1
0.8
10
Crss
0.6
ID=-250μA
1
0
5
10
15
20 25
30
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
VDS=-10V
10
VDS=-15V
1
0.1
Pulsed
Ta=25°C
0.01
0.001 0.01
0.1
1
10
100
-ID, Drain Current(A)
Maximum Safe Operating Area
1000
100μs
10μs
100
RDS(ON)
Limited
1ms
10
10ms
100ms
DC
1 _{TC=25°C, Tj=175°C,}
VGS=-10V,RθJC=1.2°C/W
single pulse
0.1
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=-30V
8
VDS=-12V
6
4
VDS=-48V
2
ID=-50A
0
0
20 40 60 80 100 120
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
80
70
60
50
40
30
20
10 ^{VGS=10V, RθJC=1.2°C/W}
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTB12P06E3
CYStek Product Specification