MTB12P06E3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C584E3
Issued Date : 2015.06.18
Revised Date : 2016.05.16
Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTB12P06E3
BVDSS
ID @ VGS=-10V, TC=25°C
ID @ VGS=-10V, TA=25°C
RDSON(TYP) @ VGS=-10V, ID=-50A
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
RDSON(TYP) @ VGS=-4.5V, ID=-30A
-60V
-58A
-7.8A
12.7mΩ
16.3mΩ
Symbol
MTB12P06E3
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
MTB12P06E3-0-UB-S
Package
Shipping
TO-220
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB12P06E3
CYStek Product Specification