MTB12P06E3 Datasheet, PDF (4/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C584E3
Issued Date : 2015.06.18
Revised Date : 2016.05.16
Page No. : 4/8
Typical Characteristics
Typical Output Characteristics
200
-10V
160
-9V
-8V
-7V
120
-6V
-5V
Brekdown Voltage vs Junction Temperature
1.4
1.2
1
80
-4V
40
VGS=-3V -3.5V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
100
VGS=-4.5V
10
VGS=-10V
0.8
0.6
ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
Tj=25°C
1
0.8
Tj=150°C
0.6
0.4
1
0.01
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160
ID=-50A
140
120
100
80
60
40
20
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.2
0
20
40
60
80
100
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
VDS=-10V, ID=-50A,
2
RDS(ON)@Tj=25°C : 12.7mΩ typ.
1.6
1.2
0.8
0.4
VGS=-4.5V, ID=-30A
RDS(ON)@Tj=25°C : 16.3mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTB12P06E3
CYStek Product Specification