MTB12P06E3 Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C584E3
Issued Date : 2015.06.18
Revised Date : 2016.05.16
Page No. : 3/8
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
-60
-
-
V
VGS=0V, ID=-250μA
VGS(th)
-0.8
-
-2.4
VDS = VGS, ID=-250μA
GFS
-
47
-
S
VDS =-5V, ID=-20A
IGSS
-
-
±100
nA V_GS=±20V
IDSS
-
-
-
-
-1
-10
μA
VDS =-60V, VGS =0V
VDS =-60V, VGS =0V, Tj=55°C
*RDS(ON)
-
-
12.7
16.5
mΩ ^{VGS =-10V, ID=-50A}
16.3
21.5
VGS =-4.5V, ID=-30A
Dynamic
*Qg
-
101
-
*Qgs
-
21
-
nC ID=-50A, VDS=-48V, VGS=-10V
*Qgd
-
20
-
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
-
25.4
-
-
30.2
-
-
123.8
-
-
50.6
-
-
5945
-
-
326
-
-
19
-
ns
VDS=-30V, ID=-50A, VGS=-10V,
RG=6Ω
pF VGS=0V, VDS=-25V, f=1MHz
Source-Drain Diode
*IS
*IS
*VSD
*trr
*Qrr
-
-
-58
A
-
-
-232
-
-0.97
-1.2
V
IS=-50A, VGS=0V
-
12.3
-
-
5.4
-
ns
nC
IF=-50A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTB12P06E3
CYStek Product Specification