MTB04N03E3 Datasheet, PDF (5/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C889E3
Issued Date : 2013.02.20
Revised Date : 2013.02.26
Page No. : 5/7
Typical Characteristics(Cont.)
Typical Transfer Characteristics
120
VDS=10V
100
80
60
40
20
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
Single Pulse Maximum Power Dissipation
1000
900
800
TJ(MAX)=175°C
700
TC=25°C
θ_JA=1.4°C/W
600
500
400
300
200
100
0
5
0.0001 0.001 0.01
0.1
1
10
Pulse Width(s)
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 ^0.1
0.05
0.02
0.01
0.01
1.E-05
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=1.4 °C/W
Single Pulse
1.E-04
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
MTB04N03E3
CYStek Product Specification