MTB04N03E3 Datasheet, PDF (3/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C889E3
Issued Date : 2013.02.20
Revised Date : 2013.02.26
Page No. : 3/7
Typical Characteristics
Typical Output Characteristics
200
Brekdown Voltage vs Junction Temperature
1.4
160
10V,9V,8V,7V,6V,5V
120
VGS=4V
80
40
VGS=3V
0
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
1.2
1
0.8
ID=250μA,
0.6
VGS=0V
0.4
-60 -20 20
60 100 140 180
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=3V
100
1
Tj=25°C
0.8
VGS=4.5V
10
1
0.1
VGS=10V
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80
ID=30A
70
60
50
40
30
20
10
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.6
Tj=150°C
0.4
0.2
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
1.8
1.6
VGS=10V, ID=30A
1.4
1.2
1
0.8
0.6
RDS(ON)@Tj=25°C : 3.8mΩ
0.4
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
MTB04N03E3
CYStek Product Specification