MTB04N03E3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C889E3
Issued Date : 2013.02.20
Revised Date : 2013.02.26
Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MTB04N03E3
BVDSS
ID
Features
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package
RDSON(TYP)
VGS=10V, ID=30A
VGS=4.5V, ID=24A
30V
115A
3.8mΩ
6.1mΩ
Symbol
MTB04N03E3
Outline
TO-220
G：Gate
D：Drain
S：Source
GDS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy
L=2mH, ID=26A, VDD=25V
Repetitive Avalanche Energy
Total Power Dissipation
L=0.05mH
TC=25°C
TC=100°C
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature.
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
MTB04N03E3
Limits
Unit
30
V
±20
115
81
A
460 *1
26
576
mJ
25
107
W
53
-55~+175
°C
CYStek Product Specification