MTB04N03E3 Datasheet, PDF (4/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C889E3
Issued Date : 2013.02.20
Revised Date : 2013.02.26
Page No. : 4/7
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss
1.2
1
C _oss
0.8
ID=1mA
Crss
100
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=5V
0.1
Pulsed
Ta=25°C
0.01
0.001 0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Safe Operating Area
1000
100 _{RDS(ON) Limit}
10
1 ^{TC=25°C, Tj=175°C,}
VGS=10V,RθJC=1.4°C/W,
single pulse
0.1
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
10μs
100μs
1ms
10ms
100ms
DC
100
0.6
ID=250μA
0.4
-60 -20 20 60 100 140 180
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8
ID=30A
6
4
2
0
0
10
20
30
40
50
60
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
140
120
100
80
60
40
20
VGS=10V, RθJC=1.4°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB04N03E3
CYStek Product Specification